MSWSHB-020-30 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – PIN Diode Shunt Switch Element

MSWSHB-020-30
PIN Diode Shunt Switch Element
Features
 Supports up to 40 W Power
 Low Insertion Loss:
0.2 dB to 2.7 GHz
0.4 dB to 10.0 GHz
 High Isolation:
30 dB to 10.0 GHz
 RoHS* Compliant
Description
A broadband, high linearity, medium power shunt
switch element in a 1.9 x 1.1 mm DFN package.
This device is designed for wireless
telecommunications infrastructure and test
instrument applications. It is also suited for other
applications in 0.05 ~ 10 GHz.
Ordering Information
Part Number
MSWSHB-020-30
Package
3000 piece reel
2012
Pin Out / Schematic
1
2
Rev. V2
Electrical Specifications: T_A = +25°C
Parameter
Test Conditions
Breakdown Voltage (V_B)
Insertion Loss (I_L)
Isolation (I_SO)
Input / Output Return Loss
I_R = 10 µA
V_R = 10 V
<2.7 GH
<10.0 GHz
I_F = 20 mA
<2.7 GH
<10.0 GHz
V_R = 10 V
<2.7 GH
<10.0 GHz
Minority Carrier Lifetime (T_L)
I_F = 10 mA, I_R = 6 mA, @ 50%
Units
V
Min.
200
Typ.
—
Max.
—
dB
—
0.08
0.2
0.40
0.5
dB
33
28
40
32
—
dB
25
15
28
20
—
ns
—
4000
—
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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