MSWSH-100-30 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – PIN Diode Shunt Switch Element

MSWSH-100-30
PIN Diode Shunt Switch Element
Features
 Supports up to 100 W when hot switched
 Supports up to 300 W when cold switched
 Low Insertion Loss: 0.15 dB up to 2.7 GHz
 High Isolation: 31 dB up to 2.7 GHz
 RoHS* Compliant
Description
A broadband, high linearity, high power shunt switch
element in a 10 x 4 mm bolt channel metal package.
This device is designed for WiMax, Wibro, WLAN,
TD-SCDMA and other wireless infrastructure
applications. It is also suited for 0.1 ~ 6 GHz
applications with up to 100 watts of power.
Rev. V1
Electrical Specifications: T_A = +25°C
Parameter
Test Conditions
Breakdown Voltage (V_B)
Forward Voltage (V_F)
Junction Capacitance (C_J)
Series Resistance (R_S)
I-Region (W)
I_R = 10 µA
I_F = 100 mA
V_R = -50 V, 1 MHz
I_F = 100 mA, 500 MHz
I-Layer
Insertion Loss (I_L)
V_R = 50 V
2.3 ~ 2.7 GHz
<6.0 GHz
Isolation (I_SO)
I_F = 100 mA
2.3 ~ 2.7 GHz
6.0 GHz
Input Return Loss (R_L)
V_R = 50 V
2.3 ~ 2.7 GHz
6.0 GHz
Minority Carrier Lifetime (T_L)
I_F = 10 mA, I_R = 6 mA, @ 50%
Units
V
mV
pF
Ω
µm
Min.
700
—
—
—
—
dB
—
dB
28
23
dB
15
10
ns
—
Typ.
—
850
0.4
0.4
80
0.15
0.35
31
26
22
15
3400
Max.
—
—
—
0.6
—
0.25
0.45
—
—
—
Absolute Maximum Ratings
Parameter
Peak Current
Thermal Resistance
Junction Temperature
Storage Temperature
Solder Temperature
Absolute Maximum
1A
5°C/W
+175°C
-65°C to +150°C
+230°C for 30 seconds
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.}
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