MSWSE-040-10 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Silicon PIN Diode Switch Element

MSWSE-040-10
Silicon PIN Diode Switch Element
Features
 Supports up to 40 W Power
 Low Insertion Loss, 0.25 dB up to 2.7 GHz
 Medium Isolation, 11 dB up to 2.7 GHz
 RoHS* Compliant
Description
A broadband, high linearity, medium power series
switch element in a 2.0 x 1.3 mm QFN package.
This device is designed for WiMax, Wibro, WLAN,
TD-SCDMA and other wireless infrastructure
applications. It is also suited for 0.1 ~ 3 GHz
applications with up to 40 watts of power.
Rev. V1
0805P
Electrical Specifications: T_A = +25°C
Parameter
Test Conditions
Breakdown Voltage
I_R = 10 µA
Forward Voltage
I_F = 50 mA
Junction Capacitance
Series Resistance
Lifetime
V_R = -50 V, 1 MHz
I_F = 10 mA, 500 MHz
I_F = 50 mA, 500 MHz
I_F = 10 mA, I_R = 6 mA , 50%
I-Region
Insertion Loss
Input Return Loss
Isolation
I-Layer
I_F = 50 mA, 2.025 GHz
I_F = 50 mA, 2.3 - 2.7 GHz
I_F = 50 mA, 2.025 GHz
I_F = 50 mA, 2.3 - 2.7 GHz
V_R = 10 V, 2.025 GHz
V_R = 10 V, 2.3 - 2.7 GHz
Min.
250
—
—
—
—
—
—
15
15
10
9
Typ.
—
900
0.12
2.0
0.6
700
40
0.12
0.25
25
20
14
11
Max.
—
—
—
—
1.4
—
—
0.20
0.35
—
—
Units
V
mV
pF
Ω
ns
µs
dB
dB
dB
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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