MSS50-XXX-X Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – High Barrier Silicon Schottky Diodes

MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Features
 V_F, R_D and C_J Matching Options
 Chip, Beam Lead and Packaged Devices
 Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS50-xxx-x Series of Schottky diodes are
fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in
the industry. Optimum mixer performance is
obtained with LO power of +2 dBm to +8 dBm per
diode.
Rev. V1
Chip
Electrical Specifications: T_A = 25°C
Model
Configuration
V_F
Typ.
V
MSS50-048-C15 Single Junction
0.5
V_BR
Min.
V
4
C_J
Typ. / Max.
pF
0.12 / 0.15
MSS50-062-C16
Test Conditions
Single Junction
0.5
I_F = 1 mA
5
0.50 / 0.55
I_R = 10 µA
V_R = 0 V
F = 1 MHz
R_S
Typ.
Ω
7
R_D
Max.
Ω
15
2
12
I = 5 mA
F_CO
Typ.
GHz
190
160
Outline
C15
C16
Beam Lead
Electrical Specifications: T_A = 25°C
Model
Configuration
V_F
Typ.
V
MSS50-146-B10B Single Junction 0.52
V_BR
Min.
V
5
C_J
Typ. / Max.
pF
0.07 / 0.12
MSS50-244-B20 Series Tee
0.52
4
0.15 / 0.20
MSS50-448-B40
Test Conditions
Ring Quad
0.52
I_F = 1 mA
10
0.20 / 0.25
I_R = 10 µA
V_R = 0 V
F = 1 MHz
R_S
Typ.
Ω
9
R_D
Max.
Ω
18
7
16
6
14
I = 5 mA
F_CO
Typ.
GHz
253
183
133
Outline
B10B
B20
B40
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1
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