MSS40-XXX-X Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Medium Barrier Silicon Schottky Diodes

MSS40-xxx-x Series
Medium Barrier Silicon Schottky Diodes
Features
 V_F, R_D and C_J Matching Options
 Chip, Beam Lead and Packaged Devices
 Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS40-xxx-x Series of Schottky diodes are
fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in
the industry. Optimum mixer performance is
obtained with LO power of 0 dBm to +6 dBm per
diode.
Rev. V1
Chip
Electrical Specifications: T_A = 25°C
Model
Configuration
MSS40-045-C15 Single Junction
V_F
Typ.
V
0.42
V_BR
Min.
V
3
C_J
Typ. / Max.
pF
0.09 / 0.12
MSS40-048-C15
Test Conditions
Single Junction
0.40
I_F = 1 mA
3
0.12 / 0.15
I_R = 10 µA
V_R = 0 V
F = 1 MHz
R_S
Typ.
Ω
7
7
R_D
Max.
Ω
15
15
I = 5 mA
F_CO
Typ.
GHz
253
190
Outline
C15
C15
Beam Lead
Electrical Specifications: T_A = 25°C
Model
Configuration
MSS40-141-B10B Single Junction
V_F
Typ.
V
0.42
V_BR
Min.
V
3
C_J
Typ. / Max.
pF
0.06 / 0.10
MSS40-148-B10B Single Junction 0.40
3
0.12 / 0.15
MSS40-155-B10B Single Junction 0.38
3
0.25 / 0.30
MSS40-244-B20 Series Tee
0.44
3
0.08 / 0.12
MSS40-248-B20 Series Tee
0.44
3
0.12 / 0.15
MSS40-255-B20 Series Tee
0.38
3
0.25 / 0.30
MSS40-448-B41 Ring Quad
0.40
3
0.12 / 0.15
MSS40-455-B40
Test Conditions
Ring Quad
0.38
I_F = 1 mA
3
0.25 / 0.30
I_R = 10 µA
V_R = 0 V
F = 1 MHz
R_S
Typ.
Ω
10
7
5
19
10
5
7
5
R_D
Max.
Ω
22
17
13
22
17
15
17
17
I = 5 mA
F_CO
Typ.
GHz
265
190
127
105
133
127
190
127
Outline
B10B
B10B
B10B
B20
B20
B20
B41
B40
1
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