MSS39-XXX-X Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – P-Type Silicon Schottky Diodes

MSS39-xxx-x Series
P-Type Silicon Schottky Diodes
Features
 Very Low 1/f Noise
 Detector Applications up to 40 GHz
 Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of Schottky diodes is
fabricated on P-Type epitaxial substrates for
superior 1/f noise performance in microwave biased-
detector applications up to 40 GHz.
Rev. V1
Chip
Electrical Specifications: T_A = 25°C
Model
V_BR
Min.
V
V_F
Typ.
V
MSS39-045-C15
5
0.40
C_J
Max.
pF
0.10
T_SS
Ttp.
dBm
-58
ϓ
Typ.
mV / mW
5,000
Frequency
Max.
GHz
18
MSS39-048-C15
5
0.39
0.15
-58
5,000
12
Test Conditions
I_R = 10 µA
I_F = 1 mA
V_R = 0 V, DC Bias = 10 mA, F = 10 GHz
F = 1 MHz R_L = 100 KΩ Video BW = 2 MHz
Outline
C15
C15
Beam Lead
Electrical Specifications: T_A = 25°C
Model
V_BR
Min.
V
V_F
Typ.
V
MSS39-144-B10B
3.5
0.38
C_J
Max.
pF
0.08
T_SS
Ttp.
dBm
-58
ϓ
Typ.
mV / mW
5,000
Frequency
Max.
GHz
40
MSS39-146-B10B
3.5
0.38
0.10
-58
5,000
26
MSS39-148-B10B
3.5
0.39
0.12
-58
5,000
18
MSS39-152-B10B
3.5
0.38
0.18
-58
5,000
12
Test Conditions
I_R = 10 µA
I_F = 1 mA
V_R = 0 V, DC Bias = 10 mA, F = 10 GHz
F = 1 MHz R_L = 100 KΩ Video BW = 2 MHz
Outline
B10B
B10B
B10B
B10B
(Continued next page)
1
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