MSS20-XXX-X Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Zero Bias Schottky Diodes

MSS20-xxx-x Series
Zero Bias Schottky Diodes
Features
 Very Low 1/f Noise
 Detector Applications up to 40 GHz
 Chip Beam Lead and Packaged Devices
Description
The MSS20-xxx-x Series of Schottky diodes is
fabricated on P-Type epitaxial substrates for
superior 1/f noise performance in microwave 0-bias
detector applications up to 40 GHz.
Rev. V2
Chip
Electrical Specifications: T_A = 25°C
Model
MSS20-046-C15
C_J
Max.
pF
0.10
T_SS
Typ.
dBm
-58
MSS20-047-C15
0.10
-59
MSS20-050-C15
0.15
-58
MSS20-051-C15
0.15
-59
MSS20-054-C15
0.20
-58
MSS20-055-C15
Test Conditions
0.20
f = 1 MHz,
V_R = 0 V
-59
f = 10 GHz,
NF = 3 dB
R_V
Min.
Ω
1000
R_V
Max.
Ω
2000
2000
6000
1000
2000
2000
6000
1000
2000
2000
6000
P_IN = -30 dBm
Video BW = 500 KHz
ϓ
Typ.
mV / mW
5000
8000
5000
8000
5000
8000
R_L = 1 MΩ
Frequency
Max.
GHz
18
18
12
12
8
8
Outline
C15
C15
C15
C15
C15
C15
Beam Lead
Electrical Specifications: T_A = 25°C
Model
MSS20-140-B10D
C_J
Max.
pF
0.08
T_SS
Typ.
dBm
-58
MSS20-141-B10D
0.08
-59
MSS20-142-B10D
0.10
-58
MSS20-143-B10D
0.10
-59
MSS20-145-B10D
0.12
-58
MSS20-146-B10D
Test Conditions
0.12
f = 1 MHz,
V_R = 0 V
-59
f = 10 GHz,
NF = 3 dB
R_V
Min.
Ω
1000
R_V
Max.
Ω
2000
2000
6000
1000
2000
2000
6000
1000
2000
2000
6000
P_IN = -30 dBm
Video BW = 500 KHz
ϓ
Typ.
mV / mW
5000
8000
5000
8000
5000
8000
R_L = 1 MΩ
Frequency
Max.
GHz
40
40
26
26
18
18
Outline
B10D
B10D
B10D
B10D
B10D
B10D
1
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