MRF587_17 Datasheet, PDF (1/13 Pages) M/A-COM Technology Solutions, Inc. – The RF Line NPN Silicon High Frequency Transistor

MRF587
The RF Line NPN Silicon High Frequency Transistor
Noise Figure 3.0 dB@ 500MHz
Designed for use in high–gain, low–noise, ultra–linear, tuned and wide-
band amplifiers. Ideal for use in CATV, MATV, and instrumentation
applications.
 Low noise figure —
NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
 High power gain —
GU(max) = 16.5 dB (typ.) @ f = 500 MHz
 Ion implanted
 All gold metal system
 High fT — 5.5 GHz
 Low intermodulation distortion:
TB3 = –70 dB
DIN = 125 dB V
 Nichrome emitter ballast resistors
Product Image
Rev. V1
CASE 244A–01, STYLE 1
1
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