MRF587 Datasheet, PDF (1/12 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

MRF587
The RF Line NPN Silicon High Frequency Transistor
Noise Figure 3.0 dB@ 500MHz
Designed for use in high–gain, low–noise, ultra–linear, tuned and wide-
band amplifiers. Ideal for use in CATV, MATV, and instrumentation
applications.
• Low noise figure —
NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
• High power gain —
GU(max) = 16.5 dB (typ.) @ f = 500 MHz
• Ion implanted
• All gold metal system
• High fT — 5.5 GHz
• Low intermodulation distortion:
TB3 = –70 dB
DIN = 125 dB μV
• Nichrome emitter ballast resistors
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Released - Rev. 07.07
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