MRF321_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – The RF Line NPN Silicon Power Transistor

MRF321
The RF Line NPN Silicon Power Transistor
10W, 400MHz, 28V
Designed primarily for wideband large–signal driver and
predriver amplifier stages in 200–500 MHz frequency
range.
• Guaranteed performance at 400 MHz, 28 Vdc
Output power = 10 W
Power gain = 12 dB min.
Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles
with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent
input Impedance
M/A-COM Products
Released - Rev. 07.07
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CASE 244–04, STYLE 1
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.