MRF275G_15 Datasheet, PDF (1/19 Pages) M/A-COM Technology Solutions, Inc. – The RF MOSFET Line

MRF275G
The RF MOSFET Line
150W, 500MHz, 28V
Designed primarily for wideband large–signal output and
driver stages from 100 – 500 MHz.
N-Channel enhancement mode
• Guaranteed performance @ 500 MHz, 28 Vdc
Output power — 150 W
Power gain — 10 dB (min.)
Efficiency — 50% (min.)
• 100% tested for load mismatch at all phase angles
with VSWR 30:1
• Overall lower capacitance @ 28 V
Ciss — 135 pF
Coss — 140 pF
Crss — 17 pF
• Simplified AVC, ALC and modulation
Typical data for power amplifiers in industrial and
commercial applications:
• Typical performance @ 400 MHz, 28 Vdc
Output power — 150 W
Power gain — 12.5 dB
Efficiency — 60%
• Typical performance @ 225 MHz, 28 Vdc
Output power — 200 W
Power gain — 15 dB
Efficiency — 65%
M/A-COM Products
Released - Rev. 07.07
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CASE 375–04, STYLE 2
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.