MRF160_17 Datasheet, PDF (1/12 Pages) M/A-COM Technology Solutions, Inc. – The RF MOSFET Line: Broadband Power FET

MRF160
The RF MOSFET Line: Broadband Power FET
4W, to 500MHz, 28V
Designed primarily for wideband large–signal output and
driver from 30–500 MHz.
Product Image
N–Channel enhancement mode MOSFET
 Guaranteed 28 V, 500 MHz performance
Output power = 4.0 W
Gain = 16 dB (min.)
Efficiency = 55% (typ.)
 Excellent thermal stability, ideally suited for Class A operation
 Facilitates manual gain control, ALC and modulation techniques
 100% Tested for load mismatch at all phase angles with 30:1 VSWR
 Low Crss – 0.8 pF Typical at VDS = 28 V
Rev. V1
1
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