MRF151_17 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – RF Power Field-Effect Transistor

MRF151
RF Power Field-Effect Transistor
150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Features
Guaranteed Performance at 30 MHz, 50 V:
 Output Power — 150 W
 Gain — 18 dB (22 dB Typ)
 Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
 Output Power — 150 W
 Gain — 13 dB
 Low Thermal Resistance
 Ruggedness Tested at Rated Output Power
 Nitride Passivated Die for Enhanced Reliability
Package Outline
Description and Applications
Designed for broadband commercial and military
applications at frequencies to 175 MHz. The high
power, high gain and broadband performance of this
device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.
Rev. V1
1
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