MRF10150_15 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – Microwave Pulse Power Silicon NPN Transistor

MRF10150
Microwave Pulse Power Silicon NPN Transistor
150W (peak), 1025–1150MHz
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed performance @ 1090 MHz
Output power = 150 W Peak
Gain = 9.5 dB min, 10.0 dB (typ.)
• 100% tested for load mismatch at all phase angles with 10:1 VSWR
• Hermetically sealed package
• Silicon nitride passivated
• Gold metallized, emitter ballasted for long life and resistance to
metal migration
• Internal input and output matching
• Characterized with 10 μs, 10% duty cycle pulses
• Recommended driver for a pair of MRF10500 transistors
M/A-COM Products
Released - Rev. 07.07
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CASE 376B–02, STYLE 1
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.