MRF10120_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Microwave Long Pulse Power Silicon NPN Transistor

MRF10120
Microwave Long Pulse Power Silicon NPN Transistor
120W (peak), 960–1215MHz
Designed for 960–1215 MHz long pulse common base amplifier
applications such as JTIDS and Mode S transmitters.
• Guaranteed performance @ 1.215 GHz, 36 Vdc
Output power = 120 W Peak
Gain = 7.6 dB min., 8 .5 dB (typ.)
• 100% tested for load mismatch at all phase angles with 3:1 VSWR
• Hermetically sealed industry standard package
• Silicon nitride passivated
• Gold metalized, emitter ballasted for long life and resistance
to metal migration
• Internal input and output matching for broadband operation
M/A-COM Products
Released - Rev. 07.07
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CASE 355C–02, STYLE 1
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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changes to the product(s) or information contained herein without notice.