MRF10031_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Microwave Power Silicon NPN Transistor

MRF10031
Microwave Power Silicon NPN Transistor
30W (peak), 960–1215MHz, 36V
Features
• Guaranteed performance @ 960-1215MHz, 36Vdc
• Output power: 30W peak
• Minimum gain: 9.0dB min., 9.5dB typ.
• 100% tested for load mismatch at all phase angles with 10:1 VSWR
• Hermetically sealed, industry standard package
• Silicon nitride passivated
• Gold metallized, emitter ballasted for long life and resistance to
metal migration
• Internal input matching for broadband operation
Description and Applications
Designed for 960–1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode–S transmitters.
Maximum Ratings
M/A-COM Products
Released - Rev. 05.30.07
Product Image
CASE 332A–03, STYLE 2
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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changes to the product(s) or information contained herein without notice.