MRF10005_17 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – Microwave Power Silicon Bipolar Transistor

MRF10005
Microwave Power Silicon Bipolar Transistor
5.0 W, 960–1215 MHz, 28V
Features
 Guaranteed performance @1.215GHz, 28Vdc
 Output power: 5.0W CW
 Minimum gain = 8.5dB, 10.3dB (Typ.)
 RF performance curves for 28 Vdc and 36 Vdc opera-
tion
 100% tested for load mismatch at all phase angles with
10:1 VSWR
 Hermetically sealed industry standard package
 Silicon nitride passivated
 Gold metallized, emitter ballasted for long life and re-
sistance to metal migration
 Internal input matching for broadband operation
Description and Applications
Designed for CW and long-pulsed common base amplifier
applications, such as JTIDS and Mode S, in the 0.96 to
1.215 GHz frequency range with high overall duty cycles.
Product Image
CASE 336E–02, STYLE 1
Rev. V1
Maximum Ratings
Symbol
Value
1
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