MRF10005_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Microwave Power Silicon Bipolar Transistor

MRF10005
Microwave Power Silicon Bipolar Transistor
5.0 W, 960–1215 MHz, 28V
Features
• Guaranteed performance @1.215GHz, 28Vdc
• Output power: 5.0W CW
• Minimum gain = 8.5dB, 10.3dB (Typ.)
• RF performance curves for 28 Vdc and 36 Vdc opera-
tion
• 100% tested for load mismatch at all phase angles with
10:1 VSWR
• Hermetically sealed industry standard package
• Silicon nitride passivated
• Gold metallized, emitter ballasted for long life and re-
sistance to metal migration
• Internal input matching for broadband operation
Description and Applications
Designed for CW and long-pulsed common base amplifier
applications, such as JTIDS and Mode S, in the 0.96 to
1.215 GHz frequency range with high overall duty cycles.
Product Image
M/A-COM Products
Released - Rev. 053007
CASE 336E–02, STYLE 1
Maximum Ratings
Symbol
Value
Unit
1
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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