MPN1XXX-12 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – Low Capacitance

MPN1xxx-12 Series
Broadband, Mesa Beam Lead PIN Diodes
Features
 Fast Switching Speed
 Low Capacitance
 Low Resistance
 Rugged Construction
 RoHS* Compliant
Description
The MPN1xxx-12 Series beam lead PIN diodes
features a unique glass and beam construction
which allows for mechanical strength and stability
during assembly. They are designed for low
resistance, low capacitance and fast switching time.
The mesa beam lead PINs are suitable for microstrip
or stripline circuits and for circuits requiring high
isolation from series mounted diodes as in
broadband multi-throw switches, phase shifters,
attenuators, limiters and modulators.
Rev. V2
Beam Lead Chip
Electrical Specifications: T_A = +25°C
Part Number
Voltage
Breakdown
(V_B)
10 µA
Junction
Capacitance
(C_J)
-10 V, 1 MHz
Series Resistance
(R_S)
10 mA, 1 GHz 50 mA, 1 GHz
V
(Min.)
pF
(Max.)
Ω
(Max.)
(Max.)
MPN1000-12
100
0.020
6.5
4.0
Lifetime
(T_L)
I_F = 10 mA,
I_R = 6 mA
ns
(Typ.)
80
Switching Time
(T_S)
20% - 80%
ns
(Max.)
5
MPN1001-12
100
0.027
6.0
3.5
80
5
MPN1002-12
100
0.030
5.5
3.2
80
5
MPN1003-12
100
0.035
5.0
2.9
80
5
MPN1004-12
100
0.040
5.0
2.7
80
5
MPN1005-12
100
0.048
5.0
2.5
80
5
MPN1006-12
100
0.055
4.0
2.3
80
5
MPN1007-12
100
0.065
4.0
2.1
80
5
MPN1100-12
50
0.025
6.0
3.7
50
3
MPN1101-12
50
0.030
5.0
3.5
50
3
MPN1102-12
50
0.040
4.5
2.9
50
3
MPN1103-12
50
0.060
4.0
2.5
50
3
1
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