MNP0014A Datasheet, PDF (1/2 Pages) M/A-COM Technology Solutions, Inc. – Silicon NIP Diode

MNP0014A
Silicon NIP Diode
Features
 Rugged Construction
 C32P Package Style
Description
The MNP0014A is a silicon NIP diode.
Rev. V1
Electrical Specifications: T_C = +25°C
Parameter
Test Conditions
Voltage Breakdown
I_R = 10 µA
Forward Voltage
I_F = 100 mA
Capacitance
V_R = 50 V, 1 MHz
Series Resistance
I_F = 100 mA, 500 MHz
Lifetime
I_F = 10 mA, I_R = 6 mA, 50%
Units
V
mV
pF
Ω
ns
Min.
500
—
—
—
—
Typ.
—
—
—
—
1400
Max.
—
950
0.22
1.2
—
Absolute Maximum Ratings^1,2
Parameter
Absolute Maximum
Reverse Voltage
500 V
Power Dissipation
6.5 W,
derate linearly to 0 @ +150°C
Operating Temperature
-65°C to +150°C
Storage Temperature
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near these
survivability limits.
Outline, C32P
Top Contact
(cathode)
Back Contact
Dimensions in mils [mm]
1
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DC-0014086