MNP0008 Datasheet, PDF (1/2 Pages) M/A-COM Technology Solutions, Inc. – Silicon NIP Diode

MNP0008
Silicon NIP Diode
Features
 Rugged Construction
 C12P Package Style
Description
The MNP0008 is a silicon NIP diode.
Rev. V1
Electrical Specifications: T_C = +25°C
Parameter
Test Conditions
Voltage Breakdown
I_R = 10 µA
Forward Voltage
I_F = 50 mA
Capacitance
V_R = 10 V, 1 MHz
Series Resistance
I_F = 10 mA, 100 MHz
Lifetime
I_F = 10 mA, I_R = 6 mA, 50%
I Layer
—
Units
V
Min.
100
mV
—
pF
—
Ω
—
ns
—
µm
—
Typ.
—
—
0.08
2.0
150
10
Max.
—
990
0.12
2.5
—
—
Absolute Maximum Ratings^1,2
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Absolute Maximum
100 V
-65°C to +150°C
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near these
survivability limits.
Outline, C12P
Top Contact
(cathode)
Back Contact
Dimensions in mils [mm]
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0014084