MMP7066-11 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – Silicon PIN Diode

MMP7066-11
Silicon PIN Diode
Features
 Low Series Resistance
 Low Junction Capacitance
 I-Layer Thickness: W = 40 µm
 RoHS* Compliant
Description
The MMP7066-11 silicon PIN diode is an
unpackaged die suitable for use in attenuator, switch
or high-power limiter applications. It is manufactured
using a proven diode manufacturing process for high
reliability and uniformity. The very low thermal
resistance (typically less than 20ºC/W) of this device
enables it to reliably handle large RF power levels.
The low series resistance and the junction
capacitance of the diode combine to produce
excellent isolation and insertion loss.
Rev. V1
CS11
Ordering Information
Part Number
Package
MMP7066-11
400 piece waffle pack
Electrical Specifications: T_A = +25°C
Parameter
Test Conditions
Voltage Rating
Forward Voltage
Series Resistance¹
Junction Capacitance
I_R = 10 µA
I_F = 100 mA
I_F = 1 mA, 100 MHz
I_F = 10 mA, 100 MHz
I_F = 100 mA, 100 MHz
V_R = 100 V, 1 MHz
Minority Carrier Lifetime
I_F = 10 mA, I_R = 6 mA, 50% Recovery
I Layer Thickness
—
1. Measured using the HP 4291 Impedance Analyzer.
Units
V
V
Min.
500
—
Ω
—
pF
—
µs
—
µm
—
Typ.
—
—
—
—
1.5
40
Max.
—
1.1
15.0
5.0
1.2
0.1
—
—
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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