MGPN Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – Low Series Resistance

MGPN Series
GaAs PIN Diodes
Features
 Nanosecond Switching Speed with Low-Cost
TTL Logic
 Low Series Resistance
 No Reverse Bias Required for Low Loss
 RoHS* Compliant
Description
The MGPN GaAs PIN Diodes are a series of GaAs
PIN diodes suitable for high frequency, >26 GHz,
switch and high speed modulation applications.
Rev. V1
Electrical Characteristics, T_C = +25°C
Parameters
Units
Test Condition
MGPN0515-C12
V_BR
V
I_R = 10 µA
Min.
Typ.
50
68
V_F
C_J
R_S
T_L
mV
pF
Ohms
ns
I_F = 10 mA V_R= 10 V, F = 1 MHz I_F = 20 mA, F = 1 GHz I_F = 10 mA I_R = 6 mA
Typ.
Typ.
Max.
Typ.
Max.
Typ.
Max.
1300
0.13
0.15
0.85
1.0
6
9
MGPN0518-C12
50
68
1300
0.16
0.18
0.75
1.0
6
9
MGPN1506-C12 150
205
1300
0.05
0.06
1.6
2.0
15
20
MGPN1504-C01A 150
205
1350
0.036
0.04
2.0
3.0
8
10
MGPN1503-C01A 150
205
1350
0.027
0.03
2.0
3.0
8
10
Absolute Maximum Ratings
Rating
V_R
I_F
Ɵ_JC
P_DISS
T_J
T_STG
T_{die attach}
Electrostatic Discharge (ESD)
Limits
Vbr
150 mA
225°C/W
400 mW
de-rated to zero at 150°C
175°C
-65°C to +200°C
<320°C per 5 sec
Class 0 (Human Body Model)
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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