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MEST2GFC-010-25 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Pin Diode Switch Element
MEST2GFC-010-25
Pin Diode Switch Element
Features
 Supports up to 10 W Power
 Low Insertion Loss: 0.4 dB up to 40 GHz
 High Isolation: 12 dB @ 10 GHz
 RoHS* Compliant
Description
A broadband medium power series switch element
in chip form (26 x 12 mils). This is an electrical
series device with a direct thermal path to ground
(EST2G). It can be used in place of beam lead
devices for medium power (up to 10 Watts) series
switching.
It is well suited for other applications from 100 MHz
up to 40 GHz
Rev. V1
Electrical Specifications: TC = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units Min.
Breakdown Voltage (VBR)
IR = 10 µA
V
100
Lifetime (t)
IF = 10 mA, IR = 6 mA, 10% / 50%
ns
—
I-Region (w)
I-Layer
µm
—
Series Resistance (RS)
IF = 100 mA, 500 MHz
Ω
—
Junction Capacitance (CJ)
Insertion Loss (IL)
Input Return Loss (IRL)
Isolation (ISO)
VR = -10 V, 1 MHz
IF = 50 mA, 10 GHz
IF = 50 mA, <40 GHz
IF = 50 mA, 10 GHz
IF = 50 mA, <40 GHz
VR = -10 V, 10 GHz
VR = -10 V, <6 GHz
pF
—
dB
—
dB
25
—
dB
10
15
Typ.
—
85
8
2
0.04
+0.3
-0.4
28
15
12
18
Max.
—
—
—
—
—
+0.4
—
—
—
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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