MEST2G-150-10-CM32 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Pin Diode Switch Element

MEST2G-150-10-CM32
Pin Diode Switch Element
Features
 High Power Handling 150 W @ 1.5 GHz or less
 Low Insertion Loss:
0.15 dB @ 1.0 GHz
0.20 dB @ 2.0 GHz
 Medium Isolation: 10 dB @ 1.0 GHz
 RoHS* Compliant
Description
The MEST2G-150-10-CM32 is a thermal to ground
series diode switch element (EST2G) in an
Aluminum Nitride package. This part is designed for
a reliable high power switch application up to 150
watts. Usable up to 2.0 GHz.
Rev. V1
Electrical Specifications: T_C = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units Min.
Breakdown Voltage (VBR)
Leakage Current (I_R)
Forward Voltage (V_F)
Series Resistance (R_S)
Resistance (R_LIM)
Total Capacitance (C_T)
Junction Capacitance (C_J)
Lifetime (t)
I-Region (w)
Input / Output Return Loss (I/OR_L)
Insertion Loss (I_L)
Isolation (I_SO)
I_R = 10 µA
V_R = 100 V
I_F = 100 mA
I_F = 100 mA, 100 MHZ
Spice Model
V_R = 50 V, 1 MHz
Spice Model
I_F = 10 mA, I_R = 6 mA, 50%
I-Layer
I_F = 100 mA, 1.0 GHz
I_F = 100 mA, 2.0 GHz
I_F = 100 mA, 1.0 GHz
I_F = 100 mA, 2.0 GHz
V_R = 10 V, 1.0 GHz
V_R = 10 V, 2.0 GHz
V
500
nA
—
V
—
Ω
—
Ω
—
pF
—
pF
—
ns
—
µm
—
dB
15
25
dB
—
dB
10
—
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Typ.
—
80
900
0.22
0.20
0.50
0.41
3000
80
20
30
0.12
0.14
12
7
Max.
—
250
—
—
—
—
—
—
—
—
0.20
0.20
—
1
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