MEST2G-010-20 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – Pin Diode Switch Element

MEST2G-010-20
Pin Diode Switch Element
Features
 Supports up to 10 W Power
 Low Insertion Loss: 0.5 dB up to 2.7 GHz
 High Isolation: 23 dB up to 2.7 GHz
 RoHS* Compliant
Description
A broadband medium power switch element in a
1.9 x 1.1 mm DFN package. This device is electrical
series and thermal direct to ground (EST2G). This
device is designed for wireless infrastructure
applications and test instruments. It is also suited for
other applications from 100 MHz up to 10 GHz.
Rev. V1
Electrical Specifications: T_C = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units Min.
Breakdown Voltage (V_BR)
Lifetime (t)
I-Region (w)
I_R = 10 µA
I_F = 10 mA, I_R = 6 mA, 10% / 90%
I-Layer
V
100
ns
—
µm
—
Series Resistance (R_S)
Junction Capacitance (C_J)
Insertion Loss (I_L)
Input Return Loss (IR_L)
Isolation (I_SO)
I_F = 100 mA
V_R = -10 V, 1 MHz
I_F = 50 mA, 2.3 ~ 2.7 GHz
I_F = 50 mA, <8 GHz
I_F = 50 mA, 2.3 ~ 2.7 GHz
I_F = 50 mA, <8 GHz
V_R = -10 mA, 2.3 ~ 2.7 GHz
V_R = -10 mA, <8 GHz
Ω
—
pF
—
dB
—
dB
20
12
dB
20
11
Typ.
—
50
8
2
0.04
0.40
0.75
25
15
23
14
Max.
—
—
—
—
—
0.6
1.0
—
—
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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