MATR-GSHC03-160150 Datasheet, PDF (1/11 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor Die

MATR-GSHC03-160150
GaN Wideband Transistor Die
28 V, 45 W, DC - 3.5 GHz
Features
 GaN on Si HEMT D-Mode Transistor Die
 Suitable for linear and saturated applications
 Broadband Operation DC - 3.5 GHz
 28 V Operation
 12 dB Gain @ 2.5 GHz
 54% Drain Efficiency @ 2.5 GHz
 100% DC Tested
 Active Area Periphery: 16 mm
 Chip Dimensions: 0.60 mm x 4.49 mm x 0.1 mm
 RoHS* Compliant
 Export Classification: EAR99
Description
The MATR-GSHC03-160150 GaN HEMT is a
wideband transistor die optimized for DC - 3.5 GHz
operation. This device supports CW, pulsed, and
linear operation with output power levels to 45 W
(46.5 dBm).
The MATR-GSHC03-160150 is ideally suited for
defense communications, land mobile radio,
avionics, wireless infrastructure, ISM applications
and VHF/UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
Rev. V1
Ordering Information
Part Number
Package
MATR-GSHC03-160150 Bare Die in Waffle Packs
Pin Configuration
Pin No.
Pin Name
G1-G12
D
S
RF_IN / V_G
RF_OUT / V_D
Back-side¹
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. The die backside must be connected to RF and DC ground.
This path must also provide a low thermal resistance heat
path.
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.}
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support