MASW6010G_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – GaAs SPDT Switch DC - 6.0 GHz

MASW6010G
GaAs SPDT Switch
DC - 6.0 GHz
Features
 Low Insertion Loss: 0.5 dB Typical @ 4 GHz
 Fast Switching Speed: 4 ns Typical
 Ultra Low DC Power Consumption
Pad Layout
RFC
Description
GND
M/A-COM Technology’s MASW6010G is an SPDT
GaAs MESFET MMIC. This part combines small
size, low insertion loss and power consumption with
high isolation. Ideal for many applications and
module use. It will function well for designs below
RF1
6 GHz.
This die includes full passivation for performance
A
and reliability.
Rev. V6
GND
RF2
B
Ordering Information¹
Part Number
MASW6010G
1. Die quantity varies.
Package
Die
Absolute Maximum Ratings ²
Parameter
Absolute Maximum
Control Voltage (A/B)
Input RF Power
Operating Temperature
Storage Temperature
-8.5 VDC
+34 dBm (500 MHz - 6 GHz)
+175°C
-65°C to +175°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
Bond Pad Dimensions
Bond Pad
Dimension Inches (mm)
RFC
0.004 x 0.004 (0.100 x 0.100)
RF2, RF3
0.004 x 0.004 (0.100 x 0.100)
A, B
0.004 x 0.004 (0.100 x 0.100)
GND1, GND2
0.012 x 0.004 (0.300 x 0.100)
DIE Size 0.031 x 0.031 x 0.010 (0.80 x 0.80 x 0.25)
Schematic
1
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