MASW4030G_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – GaAs SPDT Switch DC - 4.0 GHz

MASW4030G
GaAs SPDT Switch
DC - 4.0 GHz
Features
 Absorbtive or Reflective
 Excellent Intermodulation Products
 Excellent Temperature Stability
 Fast Switching Speed: 3 ns Typical
 Ultra Low DC Power Consumption
 Independent Bias Control
Description
The MASW4030G is an SPDT absorptive or
reflective GaAs MESFET MMIC. This part combines
small size, low insertion loss and power
consumption with high isolation. Ideal for many
applications and module use. It will function well for
designs below 4.0 GHz.
The MASW4030G is fabricated using a mature
1-micron gate length GaAs MESFET process. The
process features full chip passivation for increased
performance and reliability.
Ordering Information
Part Number
MASW4030G
Package
DIE
Absolute Maximum Rating^1,2
Parameter
Control Value (A or B)
Max Input RF Power
Storage Temperature
Absolute Maximum
-8.5 Vdc
+34.0 dBm
(500 MHz - 4 GHz)
-65°C to +175°C
Operating Temperature
+175°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
Pad Layout
Rev. V4
G1
RF ^G1
RF1
RF2
BA
T
B_C A_C
T
G2
G2
Die Size - Inches (mm)
0.042 x 0.040 x 0.010 (1.065 x 1.015 x 0.25)
Bond Pad Dimensions
Bond Pad
Dimensions - Inches (mm)
G1
0.004 x 0.008 (0.100 x 0.200)
RF1, RF2
0.004 x 0.008 (0.100 x 0.200)
T
0.0065 x 0.13 (0.165 x 0.330)
A, B, Ac, Bc, G2
0.004 x 0.004 (0.100 x 0.100)
RF
0.008 x 0.006 (0.200 x 0.150)
Schematic
G1 RF G1
RF1
RF2
50 W
T G2
B BC
AC A
50 W
G2 T
1
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