MASW-00X102 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – HMIC Silicon PIN Diode Switches with Integrated Bias Network

MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Features
 Broad Bandwidth Specified 2 - 18 GHz
 Usable up to 26 GHz
 Integrated Bias Network
 Lower Insertion Loss / Higher Isolation
 Fully Monolithic, Glass Encapsulated Chip
 Up to +33 dBm CW Power Handling @ +25°C
 RoHS* Compliant
Description
The MASW-002100 (SP2T) and MASW-3102
(SP3T) broadband switches with an integrated bias
networks utilizing MACOM’s HMIC^TM (Heterolithic
Microwave Integrated Circuit) process, US Patent
5,268,310. This process allows the incorporation of
silicon pedestals that form series and shunt diodes
or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
circuit elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance with exceptional repeatability through
low millimeter frequencies.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via 80/20
(gold/tin) solder or conductive silver epoxy.
Functional Diagrams¹
MASW-002102 (SP2T)
MASW-003102 (SP3T)
Rev. V5
Ordering Information
Part Number
Package
xx = 0G
MASW-002102-1358(xx) Gel Pack
MASW-003102-1359(xx) Gel Pack
Package
xx = 0W
Waffle Pack
Waffle Pack
1. Yellow areas indicate ribbon/wire bonding pads
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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