MASW-004240-13170W_15 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant

MASW-004240-13170W
HMIC™ SP4T Surface Mount Silicon PIN Diode Switch
RoHS Compliant
Rev. V1
Features
 Frequency of Operation 10 ± 2GHz or 24 ± 2GHz
 Surface Mount Device
 Integrated Bias Network
 No Wire Bonds Required
 Low Current Consumption
+12 mA for On State/0V for Off Condition
 Rugged, Glass Encapsulated Construction
 Fully Monolithic
 Polymer Scratch Protection
Description
The MASW-004240-13170W is a surface mount SP4T
switch chip with integrated bias network. It utilizes
M/A-COM's HMIC^TM (Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310, which allows
the incorporation of silicon pedestals that form series
and shunt diodes or vias by imbedding them in low
loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance with exceptional repeatability through low
millimeter frequencies. Patterned gold backside metal
allows for manual or re-flow soldering without the need
for wire bond connections to the RF and bias ports.
The chip may be soldered using 80Au/20Sn, RoHS
compliant solders or electrically conductive silver
epoxy. The RF bond pads are labeled J1-J5 and are
375x375µM (15x15mils) square. The DC bias bond
pads are labeled B2-B5 and are also 375x375µM
(15x15mils) square.
Yellow areas denote backside soldering points
for bias and RF connections.
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Absolute Maximum
-65^oC to +125^oC
-65^oC to +150^oC
+175^oC
Applied Forward Current
+40mA
RF Incident Power
+30dBm C.W.
Mounting Temperature +280^oC for 10 Seconds
Applications
The MASW-004240-13170W has been designed for
24GHz automotive radar sensor applications and is
also ideally suited for use at 10GHz. The switch is
turned on by applying a forward current of +12mA
at 4V to the appropriate bias port and is turned off at
0V. The RF bias network has been incorporated into
the design for ease of use and space considerations.
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