MASW-004102-12760_14 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – Silicon SP4T PIN Diode Switch with Integrated Bias Network

MASW-004102-12760
HMIC™ Silicon SP4T PIN Diode Switch
with Integrated Bias Network
Features
 Broad Bandwidth Specified up to 18 GHz
 Usable up to 26 GHz
 Integrated Bias Network
 Low Insertion Loss / High Isolation
 Fully Monolithic, Glass Encapsulated Chip
 RoHS* Compliant
Description
The MASW-004102-12760 device is a SP4T
broadband switch with integrated bias network
utilizing MACOM's HMIC^TM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310.
This process allows the incorporation of silicon
pedestals that form series and shunt diodes or vias
by imbedding them in low loss, low dispersion
glass. By using small spacing between elements,
this combination of silicon and glass gives HMIC
devices low loss and high isolation performance with
exceptional repeatability through low millimeter
frequencies. Large bond pads facilitate the use of
low inductance ribbon bonds, while gold backside
metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag
solders or electrically conductive silver epoxy.
These high performance switches are suitable for
use in multi-band ECM, Radar, and instrumentation
control circuits where high isolation to insertion loss
ratios are required. With a standard +5 V / -5 V, TTL
controlled PIN diode driver, 80 ns switching speeds
can be achieved.
Functional Diagrams
Rev. V4
Yellow areas denote wire bond pads
J1 Common Port
DC Bias
J2
J5
Ordering Information
Part Number
Package
xx = 0G
MASW-004102-1276(xx) Gel Pack
Package
xx = 0W
Waffle Pack
J3 J4
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
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