MASW-002102-13580 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – HMIC™ Silicon PIN Diode Switches with Integrated Bias Network

MASW-002102-13580
MASW-003102-13590
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Features
 Broad Bandwidth Specified up to 18 GHz
 Usable up to 26 GHz
 Integrated Bias Network
 Low Insertion Loss / High Isolation
 Rugged,
 Fully Monolithic
 Glass Encapsulate Construction
RoHS Compliant
M/A-COM Products
Rev. V3
MASW-002102-13580
Description
The MASW-002102-13580 and MASW-003102-13590
devices are SP2T and SP3T broad band switches with
integrated bias networks utilizing M/A-COM's HMIC^TM
(Heterolithic Microwave Integrated Circuit) process,
US Patent 5,268,310. This process allows the
incorporation of silicon pedestals that form series and
shunt diodes or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation performance
with exceptional repeatability through low millimeter
frequencies. Large bond pads facilitate the use of low
inductance ribbon bonds, while gold backside
metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders
or electrically conductive silver epoxy.
MASW-003102-13590
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF Incident Power
Bias Current +25°C
Absolute Maximum
-65^oC to +125^oC
-65^oC to +150^oC
+175^oC
50V
+33dBm C.W.
±20mA
Max. operating conditions for a combination
of RF power, D.C. bias and temperature:
+33dBm CW @ 15mA (per diode) @+85°C
Yellow areas denote wire bond pads
1
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or prototype measurements. Commitment to develop is not guaranteed.
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has under development. Performance is based on engineering tests. Specifications are typical.
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