MASW-000834_13560T_V8 Datasheet, PDF (1/13 Pages) M/A-COM Technology Solutions, Inc. – HMICTM PIN Diode SPDT 50 Watt Switch

MASW-000834-13560T
HMIC^TM PIN Diode SPDT 50 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Features
• Exceptional Broadband Performance, 0.05 - 6.0 GHz
• Low Loss: T_X = 0.33 dB @ 2010 MHz, 5V / 20mA
• Low Loss: T_X = 0.38 dB @ 3.5 GHz, 5V / 20mA
• High Isolation: Rx = 44dB @ 2010 MHz, 20mA / 5V
• High Isolation: Rx = 36dB @ 3.5 GHz, 20mA / 5V
• High T_X RF Input Power = 50 W C.W. @ 2010MHz
• High Tx RF Input Peak Power > 1000 W
• Suitable for Very High Power TD-SCDMA & WiMAX
Applications
• Surface Mount 4mm PQFN Package, RoHS* Compliant
Rev. V8
Functional Diagram (TOP VIEW)
(Pin 16)
N/C GND TX
GND
(Pin 1)
GND
N/C
ANT
N/C
GND
N/C
Description and Applications
The MASW-000834-13560T is a SPDT Broadband, high
linearity, common anode, PIN diode T/R switch for 0.05 -
6.0 GHz applications, including WiMAX & WiFi. The
device is provided in industry standard 4mm PQFN plastic
packaging. This device incorporates a PIN diode die
fabricated with M/A-COM Technology Solutions patented
Silicon-Glass HMIC^TM process. This chip features two
silicon pedestals embedded in a low loss, low dispersion
glass. The diodes are formed on the top of each pedestal.
The topside is fully encapsulated with silicon nitride and
has an additional polymer passivation layer. These
polymer protective coatings prevent damage and
contamination during handling and assembly.
This compact 4mm PQFN package, SPDT switch offers
wideband 0.05 - 6.0 GHz performance with excellent
isolation to loss ratio for both T_X and R_X states. The PIN
diode provides 50 W typical C.W. power handling and 65
dBm IIP3 at 2010 MHz for maximum switch
performance.
Absolute Maximum Ratings ^1,2
@ T_A = +25 °C (unless otherwise specified)
Parameter
Forward Current
Reverse Voltage ( RF & D.C. )
Operating Temperature
Storage Temperature
Junction Temperature
T_X Incident C.W. Power
Absolute Maximum
| 100 mA |
| -200 V |
-40 °C to +85 °C
-55 °C to +150 °C
+175 °C
50W (47 dBm) ³
@ 2010MHz
T_X Peak Incident Power
>300 W, 5us, 1% duty
1. Exceeding these limits may cause permanent damage.
2. M/A-COM Technology Solutions does not recommend sustained operation near
these survivability limits.
3. Baseplate Temperature must be controlled to a constant +25°C. See page 7 for
derating curve.
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
N/C
DC2
N/C GND RX GND
Pin Configuration:
(Center Metal Area is RF, D.C., and Thermal Ground)
Pin
Function
Pin
Function
1
GND
9
DC2
2
ANT
10
N/C
3
GND
11
N/C
4
N/C
12
N/C
5
N/C
13
GND
6
GND
14
TX
7
RX
15
GND
8
GND
16
N/C
Ordering Information
Part Number
Package
MASW-000834-13560T
Tape and Reel
MASW-000834-001SMB
MADR-008851-0001TB
Sample Board
Sample Board with recommended
external Driver & MASW-000834-
13560T Switch
Static Sensitivity
These devices are rated Class 1B Human Body.
Proper ESD control techniques should be used
when handling these devices.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] • Europe Tel: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
• India Tel: [phone]
• China Tel: [phone]
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.