MAPRST0912-50_13 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – NPN Silicon Microwave Power Transistors

MAPRST0912-50
Avionics Pulsed Power Transistor
50 W, 960 - 1215 MHz, 10 µs Pulse, 10% Duty
Features
 NPN Silicon Microwave Power Transistors
 Common Base Configuration
 Broadband Class C Operation
 High Efficiency Inter-Digitized Geometry
 Diffused Emitter Ballasting Resistors
 Gold Metallization System
 Internal Input and Output Impedance Matching
 Hermetic Metal/Ceramic Package
 RoHS* Compliant
Description
The MAPRST0912-50 is a RF power transistor.
These high power transistors are ideal for avionics,
communications, radar, and industrial, scientific, and
medical applications.
Outline Drawing
Rev. V1
Electrical Specifications: T_A = +25°C ± 5°C, V_CC = 50 V, P_IN = 6.2 W (unless otherwise noted)
Parameter
Test Conditions
Symbol
Min.
Max.
Units
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
I_C = 15 mA
V_CE = 40 V
BV_CES
65
I_CES
-
-
V
2.0
mA
Thermal Resistance
F = 960, 1090, 1215 MHz
R_TH(JC)
-
0.80
°C/W
Output Power
Power Gain
F = 960, 1090, 1215 MHz
P_O
50
F = 960, 1090, 1215 MHz
G_P
9.1
-
W
-
dB
Input Return Loss
F = 960, 1090, 1215 MHz
RL
40
-
dB
Collector Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
F = 960, 1090, 1215 MHz
È _C
-
F = 960 MHz
VSWR-S
-
F = 960, 1090, 1215 MHz
VSWR-T
-
-9
%
10:1
-
1.5:1
-
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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