MAPR-001011-850S00_17 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Avionics Pulsed Power Transistor

MAPR-001011-850S00
Avionics Pulsed Power Transistor
850W, 1025-1150 MHz, 10µs Pulse, 1% Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
80
3.0
250
11.6
-65 to +200
200
Units
V
V
A
kW
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 250mA
Collector-Emitter Leakage Current V_CE = 50V
Thermal Resistance
Vcc=50V, Pout=850W
Frequency
F = 1025, 1090, 1150 MHz
Input Power
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Power Gain
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Collector Efficiency
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Input Return Loss
Load Mismatch Tolerance
Vcc=50V, Pout=850W
Vcc=50V, Pout=850W
F = 1025, 1090, 1150 MHz
F = 1025 MHz
Load Mismatch Stability *
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Symbol
BV_CES
I_CES
R_TH(JC)
P_IN
G_P
_C
RL
VSWR-T
VSWR-S
Min
80
-
-
-
7.8
42
-
-
-
Max Units
-
V
30
mA
0.015 °C/W
141
W
-
dB
-
%
-9
dB
5:1
-
1.5:1
-
* All spurious signals shall be < -60dBc below carrier, except F = Fo ± ½ Fo shall be < -40dBc
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support