MAPR-001011-850S00_15 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Avionics Pulsed Power Transistor

MAPR-001011-850S00
Avionics Pulsed Power Transistor
850W, 1025-1150 MHz, 10µs Pulse, 1% Duty
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
M/A-COM Products
Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
80
3.0
250
11.6
-65 to +200
200
Units
V
V
A
kW
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 250mA
Collector-Emitter Leakage Current V_CE = 50V
Thermal Resistance
Vcc=50V, Pout=850W
Frequency
F = 1025, 1090, 1150 MHz
Input Power
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Power Gain
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Collector Efficiency
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Input Return Loss
Load Mismatch Tolerance
Vcc=50V, Pout=850W
Vcc=50V, Pout=850W
F = 1025, 1090, 1150 MHz
F = 1025 MHz
Load Mismatch Stability *
Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz
Symbol
BV_CES
I_CES
R_TH(JC)
P_IN
G_P
η_C
RL
VSWR-T
VSWR-S
Min
80
-
-
-
7.8
42
-
-
-
Max Units
-
V
30
mA
0.015 °C/W
141
W
-
dB
-
%
-9
dB
5:1
-
1.5:1
-
* All spurious signals shall be < -60dBc below carrier, except F = Fo ± ½ Fo shall be < -40dBc
1
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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changes to the product(s) or information contained herein without notice.