MAPR-000912-500S00_17 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Avionics Pulsed Power Transistor

MAPR-000912-500S00
Avionics Pulsed Power Transistor
500 W, 960 - 1215 MHz, 10 µs Pulse, 10 % Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS* compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings @ +25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation
Storage Temperature
Junction Temperature
Symbol
Rating
V_CES
80 V
V_EBO
3V
I_C
P_TOT
T_STG
52.5 A
2.2 kW
-65°C to +200°C
T_J
+200°C
Electrical Specifications: V_CC = 50 V, P_IN = 63 W, T_A = 25 ± 5°C (unless otherwise noted)
Parameter
Symbol
Test Conditions
Units
Min.
Max.
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
BV_CES
I_CES
R_TH(JC)
P_O
G_P
h_C
RL
I_C = 80 mA
V_CE = 40 V
F = 960, 1090, 1215 MHz
F = 960, 1090, 1215 MHz
F = 960, 1090, 1215 MHz
F = 960, 1090, 1215 MHz
F = 960, 1090, 1215 MHz
V
80
mA
-
°C/W
-
W
500
dB
9
%
45
dB
-
-
15
0.08
-
-
-
-9
Load Mismatch Stability
VSWR-T
F = 960 MHz
-
-
3:1
Load Mismatch Tolerance
VSWR-S
F = 960, 1090, 1215 MHz
-
-
1.5:1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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