MAPLST2122-030CF Datasheet, PDF (1/7 Pages) Tyco Electronics – RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V

MAPLST2122-030CF
LDMOS RF Line Power FET Transistor
30 W , 2110-2170 MHz, 28V
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz
frequency band. Suitable for TDMA, CDMA, and multicarrier power
amplifier applications.
• 30W output power at P1dB (CW)
• 12dB minimum gain at P1dB (CW)
• W-CDMA typical performance:
(28VDC, -45dBc ACPR @ 4.096MHz)
Output power: 4.5W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
• 10:1 VSWR ruggedness (CW @ 30W, 28V, 2110MHz)
M/A-COM Products
Released - Rev. 07.07
Product Image
MAPLST2122-030CF
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be ob-
served.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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