MAPLST1617-030CF_15 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – LDMOS RF Line Power FET Transistor

MAPLST1617-030CF
LDMOS RF Line Power FET Transistor
30 W , 1600-1700 MHz, 28V
Designed for INMARSAT applications in the 1620-1670 MHz frequency
band.
• Typical two tone performance (IMD=-30 dBc):
Average output power: 15W
Gain: 14dB (typ.)
Efficiency: 38% (typ.)
• 10:1 VSWR ruggedness at 30W, 28V,1670MHz)
Product Image
Discontinued
(For Reference Only)
MAXIMUM RATINGS
MAPLST1617-030CF
THERMAL CHARACTERISTICS
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be ob-
served.
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.