MAPL-000822-002PP Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V

MAPL-000822-002PP
LDMOS RF Line Power FET Transistor
2 W , 800-2200 MHz, 28V
Designed for broadband commercial applications up to 2.2GHz
• High gain, high efficiency and high linearity
• Ease of design for gain and insertion phase flatness
• Excellent thermal stability
• W-CDMA performance at 2.17GHz, 28Vdc
Average output power: 28dBm @ -39dBc ACPR
Gain: 14.5dB (typ.)
Efficiency: 23% (typ.)
10:1 VSWR ruggedness at 2W (CW), 28V, 2.11GHz
• Performance at 960MHz, 26Vdc, P_1dB
Average output power: 2W min.
Gain: 20dB (typ.)
Efficiency: 50% (typ.)
10:1 VSWR ruggedness at 2W, 26V, 960MHz
MAXIMUM RATINGS
M/A-COM Products
Preliminary - Rev. 12/07
Product Image
4mm x 4mm QFN-16
THERMAL CHARACTERISTICS
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be ob-
served.
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ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] / Fax: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
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Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.