MAPL-000817-015CPC Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V

MAPL-000817-015CPC
LDMOS RF Line Power FET Transistor
15 W , 800-1700 MHz, 26V
Designed for broadband commercial applications up to 1.7GHz
• High gain, high efficiency and high linearity
• Aluminum-Copper Metallization for high reliability
• RoHS Compliant
• Typical P1dB performance at 960MHz, 26Vdc, CW
Typical power output: 16.5W
Gain: 17.0dB
Efficiency: 50%
10:1 VSWR ruggedness at 15W, 26Vdc, 960MHz
MAXIMUM RATINGS
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ T_C = 25 °C
Storage Temperature
Junction Temperature
M/A-COM Products
Released - Rev. 07.08
Product Image
MAPL-000817-015CPC
Symbol
V_DSS
V_GS
P_D
T_STG
T_J
Rating
65
+20, -20
31
-65 to +150
200
Units
V_dc
V_dc
W
°C
°C
THERMAL CHARACTERISTICS
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices
should be observed.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] / Fax: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.