MAGX-003135-120L00 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty

MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Features
 GaN on SiC Depletion-Mode HEMT Transistor
 Common-Source Configuration
 Broadband Class AB Operation
 Thermally Enhanced Cu/Mo/Cu Package
 RoHS* Compliant
 +50 V Typical Operation
 MTTF = 600 Years (T_J < 200°C)
 EAR99 Export Classification
 MSL-1
Description
The MAGX-003135-120L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor optimized for civilian and military
radar pulsed applications between 3.1 - 3.5 GHz.
Using state of the art wafer fabrication processes,
these high performance transistors provide high
gain, efficiency, bandwidth, ruggedness over a wide
bandwidth for today’s demanding application needs.
The MAGX-003135-120L00 is constructed using a
thermally enhanced Cu/Mo/Cu flanged ceramic
package which provides excellent thermal
performance. High breakdown voltages allow for
reliable and stable operation in extreme mismatched
load conditions unparalleled with older
semiconductor technologies.
Ordering Information
Part Number
Description
MAGX-003135-120L00
MAGX-003135-SB5PPR
120 W GaN Power
Transistor
3.1-3.5 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
1
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