MAGX-002731-180L00 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty

MAGX-002731-180L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
Features
 GaN depletion mode HEMT microwave transistor
 Common source configuration
 Broadband Class AB operation
 Thermally enhanced Cu/Mo/Cu package
 RoHS Compliant
 +50V Typical Operation
 MTTF of 114 years (Channel Temperature < 200°C)
 EAR99 Export Classification
Application
 Civilian and Military Pulsed Radar
Production V2
26 Oct 12
Product Description
The MAGX-002731-180L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide RF power transistor optimized for civilian
and military radar pulsed applications between
2700 - 3100 MHz. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency,
bandwidth, ruggedness over a wide bandwidth
for today’s demanding application needs. The
MAGX-002731-180L00 is constructed using a
thermally enhanced Cu/Mo/Cu flanged ceramic
package which provides excellent thermal
performance. High breakdown voltages allow for
reliable and stable operation in extreme
mismatched load conditions unparalleled with
older semiconductor technologies.
Typical Peak RF Performance
50V, 300us, 10%
Freq Pin Pout Gain Flat Eff Droop
(MHz) (Wpk) (Wpk) (dB) (dB) (%) (dB)
2700 14 193.6 11.4 - - 48.9 0.45
2800 14 208.0 11.7 - - 48.6 0.43
2900 14 199.3 11.5 - - 45.8 0.44
3000 14 199.3 11.5 - - 47.7 0.45
3100 14 185.8 11.2 0.52 47.5 0.41
50V, 500us, 10%
Freq Pin Pout Gain Flat Eff Droop
(MHz) (Wpk) (Wpk) (dB) (dB) (%) (dB)
2700 14 198.2 11.5 - - 50.4 0.58
2800 14 213.1 11.8 - - 49.9 0.55
2900 14 203.2 11.6 - - 46.8 0.58
3000 14 201.2 11.6 - - 48.8 0.53
3100 14 183.2 11.2 0.65 48.3 0.53
Ordering Information
MAGX-002731-180L00
MAGX-002731-SB3PPR
180W GaN Power Transistor
Evaluation Fixture
Typical RF performance measured in M/A-COM RF test fixture.
Devices tested in common source Class-AB configuration as
follows: Vdd=50V, Idq=500mA (pulsed gate bias), F=2.7- 3.1
GHz, Pulse Width=300ms, Duty=10%.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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