MAGX-001214-650L0X Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – Common-Source Configuration

MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Features
 GaN on SiC Depletion-Mode Transistor
Technology
 Internally Matched
 Common-Source Configuration
 Broadband Class AB Operation
 RoHS* Compliant and 260°C Reflow Compatible
 +50 V Typical Operation
 MTTF = 600 Years (T_J < 200 °C)
Applications
 L-Band pulsed radar.
MAGX-001214-650L00
Description
The MAGX-001214-650L0x is a gold-metalized
matched Gallium Nitride (GaN) on Silicon Carbide
(SiC) RF power transistor optimized for pulsed
L-Band radar applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation
under more extreme mismatch load conditions
compared with older semiconductor technologies.
Ordering Information
Part Number
MAGX-001214-650L00
MAGX-L21214-650L00
Description
GaN Transistor
1200-1400 MHz
Evaluation Board
Typical RF Performance Under Standard Operating Conditions, P_OUT = 650 W (Peak)
Freq.
P_IN
Gain
I_D
(MHz)
(W)
(dB)
(A)
Eff.
RL
Droop
+1dB OD ^VSWR-S
(%)
(dB)
(dB)
(W)
(3:1)
1200
8.7
18.8
21.3
61.0
-13.9
0.2
717
S
1250
8.5
18.9
22.0
58.9
-13.8
0.3
726
S
1300
8.0
19.1
22.4
57.8
-13.5
0.3
724
S
1350
7.0
19.7
21.8
59.7
-15.8
0.3
723
S
1400
7.0
19.7
21.1
61.4
-15.0
0.2
697
S
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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