MAGX-001214-500L00-V2 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Features
 GaN on SiC D-Mode Transistor Technology
 Internally Matched
 Common-Source Configuration
 Broadband Class AB Operation
 RoHS* Compliant and 260°C Reflow Compatible
 +50 V Typical Operation
 MTTF = 600 years (T_J < 200°C)
Applications
 L-Band pulsed radar
Description
The MAGX-001214-500L00 is a gold-metalized
matched Gallium Nitride (GaN) on Silicon Carbide
(SiC) RF power transistor optimized for pulsed
L-Band radar applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation under
more extreme mismatch load conditions compared
with older semiconductor technologies.
Rev. V2
MAGX-001214-500L00
MAGX-001214-500L0S
Ordering Information
Part Number
MAGX-001214-500L00
MAGX-001214-500L0S
MAGX-001214-SB3PPR
Description
Flanged
Flangeless
1.2 - 1.4 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
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