MAGX-001090-600L00_15 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-001090-600L00
MAGX-001090-600L0S
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Features
 GaN on SiC Depletion-Mode Transistor
Technology
 Internally Matched
 Common-Source Configuration
 Broadband Class AB Operation
 RoHS* Compliant and 260°C Reflow Compatible
 +50 V Typical Operation
 MTTF = 600 years (T_J < 200°C)
Applications
 Civilian Air Traffic Control (ATC), L-Band
secondary radar for IFF and Mode-S avionics.
 Military radar for IFF and Data Links.
Description
The MAGX-001090-600L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor optimized for
pulsed avionics and radar applications. Using state
of the art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, and ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation under more extreme mismatch
load conditions compared with older semiconductor
technologies.
MAGX-001090-600L00
MAGX-001090-600L0S
Rev. V5
Ordering Information
Part Number
MAGX-001090-600L00
MAGX-001090-600L0S
MAGX-A11090-600L00
Description
Flanged
Flangeless
1.03 - 1.09 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
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