MAGX-000912-500L00_15 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-000912-500L00
MAGX-000912-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
Features
 GaN on SiC Depletion-Mode Transistor
Technology
 Internally matched
 Common-Source configuration
 Broadband Class AB operation
 RoHS* Compliant and 260°C Reflow Compatible
 +50V Typical Operation
 MTTF = 600 years (T_J < 200°C)
Applications
 Civilian Air Traffic Control (ATC), L-Band
secondary radar for IFF and Mode-S avionics.
 Military radar for IFF and Data Links.
MAGX-000912-500L00
Description
The MAGX-000912-500L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor optimized for
pulsed avionics and radar applications. Using state
of the art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, and ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation under more extreme mismatch
load conditions compared with older semiconductor
technologies.
MAGX-000912-500L0S
Rev. V5
Ordering Information
Part Number
MAGX-000912-500L00
MAGX-000912-500L0S
MAGX-A00912-500L00
Description
Flanged
Flangeless
960 - 1215 MHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
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