MAGX-000245-025000-V1 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Power Transistor

MAGX-000245-025000
GaN on SiC HEMT Power Transistor
25 W, DC-2.5 GHz, CW Power
Features
 GaN on SiC Depletion Mode Transistor
 Common-Source Configuration
 Broadband Class AB Operation
 Thermally Enhanced Cu/Mo/Cu Package
 RoHS* Compliant
 +28V Typical Operation
 MTTF = 600 years (T_J < 200°C)
Primary Applications
 RF Lighting
 RF Plasma Generation
 RF Heating
 RF Drying
 Material Processing
 Power Industrial Equipment
 ISM
 Broadcast
 MILCOM
 Datalinks
 Air Traffic Control Radar - Commercial
 Weather Radar - Commercial
 Military Radar - Military
Description
The MAGX-000245-025000 is a gold metalized
unmatched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor suitable for
CW applications centered at 2.45GHz for
application in ISM/Broadcast/Plasma
applications. This product differentiates itself
from other GaN power transistors in that it runs
well in CW. The matching network is compact
and small. The frequency of operation covers
DC - 2.5 GHz which captures commercial as well
as military applications. This product is designed
as a high power driver amplifier or final stage
depending on the application. Using state of the
art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth and ruggedness over a
wide bandwidth for today’s demanding
application needs. The MAGX-000245-025000 is
constructed using a thermally enhanced Cu/Mo/
Cu flanged ceramic package which provides
excellent thermal performance.
Rev. V1
MAGX-000245-025000
Ordering Information
Part Number
MAGX-000245-025000
Description
Bulk Packaging
MAGX-S00245-025000 Sample Board (2.45 GHz)
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.}
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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