MAGX-000245-014000-V2 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Power Transistor

MAGX-000245-014000
GaN on SiC HEMT Power Transistor
14 W, DC - 2.5 GHz, CW Power
Features
 GaN on SiC Depletion Mode Transistor
 Common-Source Configuration
 Broadband Class AB Operation
 Thermally Enhanced Cu/W Package
 RoHS* Compliant
 +50V Typical Operation
 MTTF = 600 years (T_J < 200°C)
Primary Applications
 RF Lighting
 RF Plasma Generation
 RF Heating
 RF Drying
 Material Processing
 Power Industrial Equipment
 ISM
 Broadcast
 MILCOM
 Datalinks
 Air Traffic Control Radar - Commercial
 Weather Radar - Commercial
 Military Radar - Military
Description
The MAGX-000245-014000 is a gold metalized
unmatched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor suitable for CW
applications centered at 2.45GHz for application in
ISM/Broadcast/Plasma applications. This product
differentiates itself from other GaN power
transistors in that it runs well in CW. The matching
network is compact and small. The frequency of
operation covers DC - 2.5 GHz which captures
commercial as well as military applications. This
product is designed as a high power driver
amplifier or final stage depending on the
application. Using state of the art wafer fabrication
processes, these high performance transistors
provide high gain, efficiency, bandwidth and
ruggedness over a wide bandwidth for today’s
demanding application needs. The MAGX-000245
-014000 is constructed using a thermally
enhanced Cu/W flanged ceramic package which
provides excellent thermal performance.
Rev. V2
MAGX-000245-014000
Ordering Information
Part Number
MAGX-000245-014000
Description
Bulk Packaging
MAGX-S00245-014000 Sample Board (2.45 GHz)
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.}
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